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| GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm * * * * * 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 6 8 5 130 1.1 150 -55~150 2 Unit V V Collector current Collector power dissipation Junction temperature Storage temperature range A W C C JEDEC JEITA TOSHIBA 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch x 1.5 t] Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/s. 1 2002-05-17 GT5G131 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = 6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 3 V VCE = 10 V, VGE = 0, f = 1 MHz 3V 0 2.3 30 Min 0.5 Typ. 2.2 2800 1.3 1.4 1.5 1.8 Max 10 10 1.0 7.0 Unit A A V V pF s VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% = 300 V 114 C/W Note 2: Drive operation: Mount on glass epoxy board [1 inch x 1.5 t] Marking GT5G131 Type Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era) 2 2002-05-17 GT5G131 IC - VCE 200 3.0 160 160 3.5 200 IC - VCE 3.0 (A) (A) 3.5 2.5 IC 120 IC 2.5 120 Collector current Collector current 80 VGE = 2.0 V 80 VGE = 2.0 V 40 Common emitter Tc = -40C 0 0 1 2 3 4 5 40 Common emitter Tc = 25C 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 200 200 IC - VCE (A) (A) 160 3.5 3.0 3.5 160 3.0 120 IC 120 Collector current Collector current 2.5 IC 2.5 80 VGE = 2.0 V 40 Common emitter Tc = 125C 80 VGE = 2.0 V 40 Common emitter Tc = 70C 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VGE 200 3 VCE (sat) - Tc IC = 130 A 2.5 100 70 1.5 40 1 0.5 Common emitter VGE = 3 V 0 -80 -40 0 40 80 120 160 (A) 160 25 70 Collector-emitter saturation voltage VCE (sat) (V) 5 IC 2 120 Collector current Tc = -40C 125 80 40 Common emitter VCE = 5 V 0 0 1 2 3 4 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2002-05-17 GT5G131 VCE - VGE 5 5 VCE - VGE (V) Common emitter Tc = -40C Common emitter Tc = 25C 4 IC = 130 A 3 70 2 100 (V) 4 IC = 130 A 3 70 2 Collector-emitter voltage VCE 100 1 40 Collector-emitter voltage VCE 1 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE - VGE 5 5 VCE - VGE (V) Common emitter Tc = 70C Common emitter Tc = 125C 4 (V) 4 IC = 130 A 3 100 Collector-emitter voltage VCE Collector-emitter voltage VCE 70 3 70 100 IC = 130 A 2 2 1 40 1 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VGE (OFF) - Tc Gate-emitter cut-off voltage VGE (OFF) (V) 1.4 Common emitter 1.2 VCE = 5 V IC = 1 mA 10000 C - VCE Cies 1 0.8 0.6 (pF) Capacitance C 1000 100 Cres Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25C 10 100 1000 0.4 0.2 0 -80 -40 0 40 80 120 160 10 1 Case temperature Tc (C) Collector-emitter voltage VCE (V) 4 2002-05-17 GT5G131 Switching Time - RG 10 500 VCE, VGE - QG 10 (V) Collector-emitter voltage VCE tf 1 tr Common emitter VCE = 300 V VGE = 3 V IC = 130 A Tc = 25C 0.1 1 10 100 1000 Switching time 200 VGE Common emitter 100 VCE 0 0 20 40 VCC = 300 V RL = 2.3 Tc = 25C 60 4 2 0 80 Gate resistance RG () Gate charge QG (nC) Switching Time - ICP 10 800 Maximum Operating Area (F) (s) toff tf 1 ton 600 Main capacitance CM Switching time 400 Common emitter tr VCC = 300 V VGE = 3 V RG = 30 Tc = 25C 100 150 200 VCM = 350 V 200 Tc < 70C = VGE = 4 V 10 < RG < 300 = = 0 0 40 80 120 160 200 0.1 0 50 Collector current IC (A) Peak collector current ICP (A) Minimum Gate Drive Area 200 (A) 160 ICP Peak collector current 120 Tc = 25C 70 80 40 0 0 2 4 6 8 Gate-emitter voltage VGE (V) 5 2002-05-17 Gate-emitter voltage 300 6 VGE toff ton 400 8 (s) (V) GT5G131 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-05-17 |
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